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Si2304DDS
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
I D (A) a
Q g (Typ.)
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
30
0.060 at V GS = 10 V
0.075 at V GS = 4.5 V
3.6
3.6
2.1 nC
? TrenchFET ? Power MOSFET
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? DC/DC Converter
TO-236
(SOT-23)
D
G
1
3
D
S
2
Top V ie w
Si2304DDS (P4)*
G
* Marking Code
Orderin g Information: Si2304DDS-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
3.6 a
Unit
V
Continuous Drain Current (T J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
T C = 70 °C
T A = 25 °C
T A = 70 °C
T C = 25 °C
T A = 25 °C
T C = 25 °C
I D
I DM
I S
3.3
3.3
2.7
15
1.4
0.9 b, c
1.7
A
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
1.1
1.1 b, c
W
T A = 70 °C
0.7 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
T J , T stg
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient b, d t ≤ 5s
Maximum Junction-to-Foot (Drain) Steady State
Symbol
R thJA
R thJF
Typical
90
60
Maximum
115
75
Unit
°C/W
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
Document Number: 65175
S09-1496-Rev. A, 10-Aug-09
www.vishay.com
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